A. Tijjani, G.S.M. Galadanci, G. Babaji


Over the last few decades, transistor scaling has taken the centre stage of semiconductor devices. The scaling of metal oxide semiconductor field effect transistor (MOSFET) with 𝑆𝑖𝑂2 thickness has been the driving force towards the technological advancement, but continuous scaling causes a problem of short channel effects, high leakage current, excessive process variation and reliability issues. It is thus, of great necessity to replace the channel material with high mobility materials such as carbon nanotubes FETs to guarantee continued scaling of the device. Carbon Nanotube Field Effect Transistors (CNTFET) are promising Nano-scaled devices for implementing high performance and low power circuits. The Nano device simulator FETtoy was used to assess the electrical characteristics of CNTFETs as channel materials with 𝑆𝑖𝑂2 , Zr𝑂2 , and Hf𝑂2 as dielectric materials. Also, effects on temperature variation were investigated. The output parameters that were studied are: drain current, on current (πΌπ‘œπ‘›), off current (πΌπ‘œπ‘“π‘“), threshold swing (S), drain induced barrier lowering (DIBL), transconductance (π‘”π‘š), output conductance (𝑔𝑑), voltage gain (𝐴𝑣) and carrier injection velocity (𝑣𝑖𝑛𝑗 ). From the results obtained, carbon nanotube as channel material with Hf𝑂2 as dielectric material has higher drain current of 19.3πœ‡π΄, at higher gate voltage of 0.6 volt and operated near quantum capacitance limit. The obtained results were further compared with other established academic paper published of experimental finding under the same category and are in agreement. This apparently indicate that carbon nanotube as channel material with Hf𝑂2 can be used to increase the performance of carbon nanotube field effect transistor at room temperature with 0.88 gate control parameter to suppress the harmful subthreshold conditions when compared with other MOSFET devices. Read full PDF

Keywords: CNTFET, DIBL, FETtoy, SCEs


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